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10 kV电缆半导电层缺陷引发的“隐性”电-热协同致热机理与诊断研究

"Latent" Electrothermal Coupled Heating Mechanism and Diagnosis of 10 kV Cables Caused by Semiconductive Layer Defects

  • 摘要: 文章针对一例10 kV XLPE电缆红外检测呈现严重局部过热(71.6 ℃)而常规绝缘电阻及耐压试验均合格的“隐性”故障,结合解剖形貌分析与等效电路模型,深入研究了该类缺陷的物理演化机制。研究发现,护套破损导致的半导电层局部氧化与电阻率非线性突增是引发故障的根本原因。不同于传统的局部放电致热模型,提出了“高阻性泄漏电流与非线性介质损耗协同致热”机理。理论推导表明,在缺陷微区内,电场畸变与温度升高形成正反馈循环,导致局部功率密度呈指数增长,而宏观泄漏电流仍处于μA级,从而逃逸了常规电气预防性试验的检测。研究揭示了电缆早期潜伏性热故障的非脉冲演化特征,确立了红外热像检测在配电网状态检修中的关键地位。

     

    Abstract: This paper investigates a "latent" fault case in a 10 kV XLPE cable that exhibited severe localized overheating (71.6 °C) during infrared detection despite passing conventional insulation resistance and withstand voltage tests. By combining morphological analysis of the dissection and an equivalent circuit model, this study deeply explores the physical evolution mechanism of such defects. The findings indicate that local oxidation and the non-linear surge in resistivity of the semiconductive layer, caused by sheath damage, are the root causes of the fault. Unlike traditional partial-discharge-induced heating models, this paper proposes a mechanism of thermal generation driven by the synergistic effects of high-resistance leakage current and nonlinear dielectric loss. Theoretical derivations demonstrate that, within the defect microregion, electric field distortion and temperature rise form a positive feedback loop, leading to an exponential increase in local power density, while the macroscopic leakage current remains at the microampere level, thereby escaping detection by routine preventive tests. This study reveals the nonplused evolution characteristics of early latent thermal faults in cables and establishes the critical role of infrared thermography in condition-based maintenance of distribution networks.

     

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